BARE DIE SILICON CARBIDE SCHOTTKY DIODES FUNDAMENTALS EXPLAINED

PiN diodes fabricated over a proton-implanted wafer display present–voltage properties comparable to These of PiN diodes with no proton implantation. In distinction, the expansion of 1SSFs is efficiently suppressed in PiN diodes with proton implantation. Consequently, proton implantation into 4H-SiC epitaxial wafers is an effective technique for